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Self-Assembled Growth of GaN Quantum Dots Using Low-Pressure MOCVD

โœ Scribed by M. Miyamura; K. Tachibana; T. Someya; Y. Arakawa

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
85 KB
Volume
228
Category
Article
ISSN
0370-1972

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Modified Stranski-Krastanov Growth in St
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โœ Martinez-Guerrero, E. ;Beneyton, R. ;Adelmann, C. ;Daudin, B. ;Si Dang, Le ;Mula ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 173 KB ๐Ÿ‘ 2 views

In a stacked structure of cubic GaN/AlN islands grown in a Stranski-Krastanov mode, the critical thickness for the GaN islanding (2D-3D transition) decreases by a factor of up to 10 between the initial dot layer and the third one. This variation of the critical thickness is strongly dependent on the