In a stacked structure of cubic GaN/AlN islands grown in a Stranski-Krastanov mode, the critical thickness for the GaN islanding (2D-3D transition) decreases by a factor of up to 10 between the initial dot layer and the third one. This variation of the critical thickness is strongly dependent on the
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The Effect of Upper Barrier Layer Growth on Self-Assembled CdSe Quantum Dots
โ Scribed by Y. Murase; K. Maehashi; T. Hanada; Y. Hirotsu; H. Nakashima
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 125 KB
- Volume
- 229
- Category
- Article
- ISSN
- 0370-1972
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