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MOCVD Growth and Optical Characterization of Stacked InGaN Quantum Dots for Laser Applications

โœ Scribed by Tachibana, K. ;Someya, T. ;Arakawa, Y.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
136 KB
Volume
176
Category
Article
ISSN
0031-8965

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A set of InGaN/GaN/AlGaN structures with various structure design and InGaN/GaN active region growth technique was grown by MOCVD on sapphire substrates. 300 K lasing under optical pumping with threshold excitation densities of 13.5 and 40 kW/cm 2 and wavelengths of 405 and 435 nm, respectively, wer