Growth, Optical and Structural Character
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Lundin, W.V. ;Sakharov, A.V. ;Usikov, A.S. ;Bedarev, D.A. ;Tsatsulnikov, A.F. ;C
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Article
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2001
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John Wiley and Sons
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English
โ 95 KB
A set of InGaN/GaN/AlGaN structures with various structure design and InGaN/GaN active region growth technique was grown by MOCVD on sapphire substrates. 300 K lasing under optical pumping with threshold excitation densities of 13.5 and 40 kW/cm 2 and wavelengths of 405 and 435 nm, respectively, wer