## Abstract A trial was carried out to fabricate selfβassembled InGaN QD structures through periodic interruption growth, which is new method for supplying the source materials in a metal organic chemical vapor deposition (MOCVD) reactor. The growth of InGaN QDs was interrupted periodically by stop
Growth of nanoscale InGaN self-assembled quantum dots
β Scribed by L.W. Ji; Y.K. Su; S.J. Chang; L.W. Wu; T.H. Fang; J.F. Chen; T.Y. Tsai; Q.K. Xue; S.C. Chen
- Book ID
- 108341801
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 226 KB
- Volume
- 249
- Category
- Article
- ISSN
- 0022-0248
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