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Growth of high quality N-polar AlN(0001) on Si(111) by plasma assisted molecular beam epitaxy

✍ Scribed by S. Dasgupta; F. Wu; J. S. Speck; U. K. Mishra

Book ID: 121848508
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 556 KB
Volume: 94
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3118593

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