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Growth of high-quality CuGaSe2thin films using ionized Ga precursor

✍ Scribed by Miyazaki, H. ;Miyake, T. ;Chiba, Y. ;Yamada, A. ;Konagai, M.

Book ID
105364043
Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
548 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We have fabricated high‐quality CuGaSe~2~ thin films using ionized Ga precursors. The films were characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. The grain size and the crystallinity of CuGaSe~2~ films using ionized Ga precursors were larger than those of the films using unionized Ga precursors. It was found from the experiments that the migration energy of Ga precursors played an important role in the crystal growth for high‐quality CuGaSe~2~ films. (Β© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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