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ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me2GaOiPr

✍ Scribed by Heeju Lee; Kunhee Kim; Jeong-Jun Woo; Doo-Jin Jun; Youngsoo Park; Yunsoo Kim; Hong Won Lee; Yong Jai Cho; Hyun Mo Cho

Publisher: John Wiley and Sons
Year: 2011
Tongue: English
Weight: 339 KB
Volume: 17
Category: Article
ISSN: 0948-1907
DOI: 10.1002/cvde.201106879

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