Growth of high mobility GaN by ammonia-molecular beam epitaxy
β Scribed by Tang, H.; Webb, James B.
- Book ID
- 121785371
- Publisher
- American Institute of Physics
- Year
- 1999
- Tongue
- English
- Weight
- 295 KB
- Volume
- 74
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.123855
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π SIMILAR VOLUMES
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a βhow toβ on pr
## Abstract We demonstrate AlGaN/GaN heterojunction bipolar transistors (HBTs) by ammonia molecular beam epitaxy (NH~3~ MBE). The several benefits offered by NH~3~ MBE for the growth of GaN based vertical electronic devices are discussed. To obtain good ohmic contacts to the base layer, devices wer