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Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy

✍ Scribed by Webb, J. B.; Tang, H.; Rolfe, S.; Bardwell, J. A.

Book ID: 126944451
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 268 KB
Volume: 75
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.124252

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