Growth of GaAsInP heteromaterials and corresponding strain determination
✍ Scribed by Songyan Chen; Yudong Li; Hongbo Sun; Yuheng Peng; Shiyong Liu
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 417 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract LPE growth of InP on GaAs is shown to be possible from indium or tin as a solvent, respectively. Only growth on (111) B faces yields acceptable smooth layers. From In/InP‐melts layers with inclusions near the heterojunctions are obtained. No such microscopically small inclusions were ob
## Abstract The results of three‐dimensional unsteady modeling of melt turbulent convection with prediction of the crystallization front geometry in liquid encapsulated Czochralski growth of InP bulk crystals and vapor pressure controlled Czochralski growth of GaAs bulk crystals are presented. The
Growth and Electron Microscopical Investigations of (CaBa)Fs Epitaxial Layers on GaAs and InP Substrates (CaBa)Fa layers have been grown on (100)-oriented GaAs and I n P substrates by flash evaporation technique. They were investigated by means of electron microscopical methods (RHEED, TED, TEM). Ep