𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth of GaAsInP heteromaterials and corresponding strain determination

✍ Scribed by Songyan Chen; Yudong Li; Hongbo Sun; Yuheng Peng; Shiyong Liu


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
417 KB
Volume
35
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


LPE-growth of InP on GaAs
✍ Dr. B. Jacobs; Prof. Dr. E. Butter; B. Dobner 📂 Article 📅 1978 🏛 John Wiley and Sons 🌐 English ⚖ 318 KB

## Abstract LPE growth of InP on GaAs is shown to be possible from indium or tin as a solvent, respectively. Only growth on (111) B faces yields acceptable smooth layers. From In/InP‐melts layers with inclusions near the heterojunctions are obtained. No such microscopically small inclusions were ob

Modeling analysis of liquid encapsulated
✍ E. V. Yakovlev; V. V. Kalaev; E. N. Bystrova; O. V. Smirnova; Yu. N. Makarov; Ch 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 1012 KB

## Abstract The results of three‐dimensional unsteady modeling of melt turbulent convection with prediction of the crystallization front geometry in liquid encapsulated Czochralski growth of InP bulk crystals and vapor pressure controlled Czochralski growth of GaAs bulk crystals are presented. The

Growth and Electron Microscopical Invest
✍ Dr. B. Schumann; Prof. Dr. sc. nat. G. Kühn; Dr. G. Wagner 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 668 KB

Growth and Electron Microscopical Investigations of (CaBa)Fs Epitaxial Layers on GaAs and InP Substrates (CaBa)Fa layers have been grown on (100)-oriented GaAs and I n P substrates by flash evaporation technique. They were investigated by means of electron microscopical methods (RHEED, TED, TEM). Ep