Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals

✍ Scribed by E. V. Yakovlev; V. V. Kalaev; E. N. Bystrova; O. V. Smirnova; Yu. N. Makarov; Ch. Frank-Rotsch; M. Neubert; P. Rudolph

• Publisher: John Wiley and Sons
• Year: 2003
• Tongue: English
• Weight: 1012 KB
• Volume: 38
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200310064

✦ Synopsis

Abstract

The results of three‐dimensional unsteady modeling of melt turbulent convection with prediction of the crystallization front geometry in liquid encapsulated Czochralski growth of InP bulk crystals and vapor pressure controlled Czochralski growth of GaAs bulk crystals are presented. The three‐dimensional model is combined with axisymmetric calculations of heat and mass transfer in the entire furnace. A comprehensive numerical analysis using various two‐dimensional steady and three‐dimensional unsteady models is also performed to explore their possibilities in predicting the melt/crystal interface geometry. The results obtained with different numerical approaches are analyzed and compared with available experimental data. It has been found that three‐dimensional unsteady consideration of heat and mass transfer in the crystallization zone provides a good reproduction of the solidification front geometry for both GaAs and InP crystal growth.