By the hand of a stationary system-oriented model of t h c InP crystal growth (LEC) various regimes of heat input into the melt are demonstrated. They are compared by regarding their influence over the maximal temperature of the melt, the curvature of the crystallization front, and the temperature o
β¦ LIBER β¦
Analysis of the crystal weighing method applied to liquid encapsulated Czochralski growth
β Scribed by Tom H. Johansen
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 933 KB
- Volume
- 84
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
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## Abstract The results of threeβdimensional unsteady modeling of melt turbulent convection with prediction of the crystallization front geometry in liquid encapsulated Czochralski growth of InP bulk crystals and vapor pressure controlled Czochralski growth of GaAs bulk crystals are presented. The