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Growth of cBN films by d.c.-bias assisted inductively-coupled r.f. plasma chemical vapor deposition

โœ Scribed by Yu, J; Matsumoto, S


Book ID
122637058
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
499 KB
Volume
12
Category
Article
ISSN
0925-9635

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Chemical bonding and composition of sili
โœ M. Matsuoka; S. Isotani; W. Sucasaire; L.S. Zambom; K. Ogata ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 560 KB

Thin silicon nitride films were prepared at 350 ยฐC by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH 3 /SiH 4 or N 2 /SiH 4 gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process