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Growth of aluminium nitride pillar crystals by chemical vapour deposition

✍ Scribed by Hideaki Itoh; Hisashi Morikawa; Kohzoh Sugiyama


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
614 KB
Volume
94
Category
Article
ISSN
0022-0248

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πŸ“œ SIMILAR VOLUMES


Chemical and plasmachemical vapour depos
✍ Prof. Dr. H. Arnold; Dipl.-Chem. L. Biste; Dipl.- Ing. D. Bolze; Dr. G. Eichhorn πŸ“‚ Article πŸ“… 1976 πŸ› John Wiley and Sons 🌐 English βš– 281 KB

## Abstract AIN was deposited pyrolytically by means of the aluminium trichloride‐ammonia process (either introducing both compounds seperately or in complex form) and by plasmachemical reaction of aluminium trichloride with nitrogen at temperatures from 600 to 1300Β°C. Layers deposited onto (100) s