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Growth of aluminium nitride on porous silica by atomic layer chemical vapour deposition

✍ Scribed by R.L Puurunen; A Root; P Sarv; S Haukka; E.I Iiskola; M Lindblad; A.O.I Krause

Book ID
108416252
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
197 KB
Volume
165
Category
Article
ISSN
0169-4332

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πŸ“œ SIMILAR VOLUMES

Chemical and plasmachemical vapour depos
Chemical and plasmachemical vapour deposition of aluminium nitride layers
✍ Prof. Dr. H. Arnold; Dipl.-Chem. L. Biste; Dipl.- Ing. D. Bolze; Dr. G. Eichhorn πŸ“‚ Article πŸ“… 1976 πŸ› John Wiley and Sons 🌐 English βš– 281 KB

## Abstract AIN was deposited pyrolytically by means of the aluminium trichloride‐ammonia process (either introducing both compounds seperately or in complex form) and by plasmachemical reaction of aluminium trichloride with nitrogen at temperatures from 600 to 1300Β°C. Layers deposited onto (100) s