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Growth of aligned wurtzite GaN nanorods on Si(111): Role of Silicon nitride intermediate layer

โœ Scribed by Kumar, Praveen; Tangi, Malleswararao; Shetty, Satish; Kesaria, Manoj; Shivaprasad, S. M.


Book ID
118746323
Publisher
Cambridge University Press
Year
2012
Weight
572 KB
Volume
1411
Category
Article
ISSN
0272-9172

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Role of 3C-SiC intermediate layers for I
โœ Yoshihisa Abe; Noriko Ohmori; Arata Watanabe; Jun Komiyama; Syunichi Suzuki; Hir ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 923 KB

The role of 3C-SiC intermediate layers in III-nitride crystal growth has been studied by observing IIInitride epilayers grown on Si substrates. We found that better quality epilayers were obtained by using such intermediate layers than by direct growth on Si substrates. In the case of III-nitride ep