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GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy

✍ Scribed by Nakada, Yoshinobu; Aksenov, Igor; Okumura, Hajime

Book ID: 119946614
Publisher: American Institute of Physics
Year: 1998
Tongue: English
Weight: 520 KB
Volume: 73
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.122014

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