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Growth of AgGaS2single crystal by descending crucible with rotation method and observation of properties

✍ Scribed by Beijun Zhao; Shifu Zhu; Zhenghui Li; Fengliang Yu; Xinghua Zhu; Deyou Gao

Book ID
105648627
Publisher
Springer
Year
2001
Tongue
English
Weight
638 KB
Volume
46
Category
Article
ISSN
1001-6538

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Stoichiometric single crystal growth of
Stoichiometric single crystal growth of AgGaS2 by iodine transport method and characterization
✍ P. Prabukanthan; R. Dhanasekaran πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 213 KB πŸ‘ 1 views

## Abstract High quality single crystals of ternary AgGaS~2~ (AGS) semiconductor with chalcopyrite structure have been grown by chemical vapor transport (CVT) technique using iodine as a transporting agent at different growth zone temperatures. The powder X‐ray diffraction and single crystal X‐ray