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Growth and characterizations of CdGeAs2single crystal by descending crucible with rotation method

✍ Scribed by Huang, Wei; Zhao, Bei-Jun; Zhu, Shi-Fu; He, Zhi-Yu; Chen, Bao-Jun; Tang, Jing-Jing; Liu, Wei-Jia


Book ID
121631637
Publisher
Nonferrous Metals Society of China
Year
2013
Tongue
English
Weight
320 KB
Volume
33
Category
Article
ISSN
1001-0521

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A large, crack-free CdGeAs 2 single crystal measuring 15 mm in diameter and 45 mm in length was grown in a vertical three-zone tubular furnace by a modified vertical Bridgman method, i.e. quasi-seed technique with small temperature gradient and descending quartz ampoule. High-purity, single phase Cd