Preparation and characterization of CdGeAs2 crystal by modified vertical Bridgman method

✍ Scribed by Zhiyu He; Beijun Zhao; Shifu Zhu; Jiawei Li; Yi Zhang; Wenjuan Du; Wei Huang; Baojun Chen

• Book ID: 104022246
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 834 KB
• Volume: 314
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.11.151

✦ Synopsis

A large, crack-free CdGeAs 2 single crystal measuring 15 mm in diameter and 45 mm in length was grown in a vertical three-zone tubular furnace by a modified vertical Bridgman method, i.e. quasi-seed technique with small temperature gradient and descending quartz ampoule. High-purity, single phase CdGeAs 2 polycrystallite for crystal growth was synthesized using a rocking furnace with temperature oscillation techniques. Various measuring means, including X-ray diffractometer(XRD), Fourier transform infrared spectroscopy(FTIR), and Field emission scanning electron microscope(FE-SEM) were adopted to characterize the as-grown crystal. It is found that the cleavage plane of the as-grown crystal is {1 0 1} face; the crystal is integrated in structure and crystallized well; etch pits in the shape of pentagon on (1 1 2) face have been observed for the first time using the new preferential etchant we prepared. All these results encouragingly indicate that the modified vertical Bridgman method is a convenient and effective way for high quality CdGeAs 2 crystal growth.