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Growth of AgGaS2 single crystals by chemical transport with halogen

✍ Scribed by Y. Noda; T. Kurasawa; Y. Furukawa; K. Masumoto


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
327 KB
Volume
115
Category
Article
ISSN
0022-0248

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Stoichiometric single crystal growth of
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## Abstract High quality single crystals of ternary AgGaS~2~ (AGS) semiconductor with chalcopyrite structure have been grown by chemical vapor transport (CVT) technique using iodine as a transporting agent at different growth zone temperatures. The powder X‐ray diffraction and single crystal X‐ray