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Stoichiometric single crystal growth of AgGaS2 by iodine transport method and characterization

✍ Scribed by P. Prabukanthan; R. Dhanasekaran

Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
213 KB
Volume
43
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

High quality single crystals of ternary AgGaS~2~ (AGS) semiconductor with chalcopyrite structure have been grown by chemical vapor transport (CVT) technique using iodine as a transporting agent at different growth zone temperatures. The powder X‐ray diffraction and single crystal X‐ray diffraction studies indicate that the as‐grown AGS crystals belong to the tetragonal (chalcopyrite) system with (112) plane as the dominant peak. The full width at half maximum (FWHM) of the X‐ray rocking curve for the as‐grown AGS single crystal is 5 arcsec. The energy dispersive X‐ray analysis (EDAX) and optical transmission spectra of as‐grown AGS single crystals grown at different conditions show the almost same composition and band gap (2.65 eV). Photoluminescence (PL) spectra of as‐grown AGS single crystals show prominent band edge emission at 2.61 eV. The resistivity of the as‐grown AGS single crystal has been measured. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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