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Growth Model of Oval Defect Structures in MBE GaAs Layers

โœ Scribed by N. J. Kadhim; D. Mukherjee


Book ID
110238731
Publisher
Springer
Year
1999
Tongue
English
Weight
99 KB
Volume
18
Category
Article
ISSN
0261-8028

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Oval Defects in the MBE Grown AlGaAs/InG
โœ K. Klima; M. Kaniewska; K. Reginski; J. Kaniewski ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 93 KB

Oval defects were investigated on the surface of complex AlGaAs/InGaAs/GaAs and InGaAs/GaAs multilayer structures grown by molecular beam epitaxy and the results were compared with that obtained for bulk GaAs layers grown by the same technique. The oval defect density was correlated with the gallium