✦ LIBER ✦

Electrical Properties of Oval Defects in GaAs Grown by MBE

✍ Scribed by Shinohara, Masanori; Ito, Tomonori; Wada, Kazumi; Imamura, Yoshihiro

Book ID: 118064256
Publisher: Institute of Pure and Applied Physics
Year: 1984
Tongue: English
Weight: 595 KB
Volume: 23
Category: Article
ISSN: 0021-4922
DOI: 10.1143/jjap.23.l371

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Types of oval defects on GaAs grown by M

Types of oval defects on GaAs grown by MBE

✍ C.T. Lee; Y.C. Chou 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 379 KB

Oval Defects in the MBE Grown AlGaAs/InG

Oval Defects in the MBE Grown AlGaAs/InGaAs/GaAs and InGaAs/GaAs Structures

✍ K. Klima; M. Kaniewska; K. Reginski; J. Kaniewski 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 93 KB

Oval defects were investigated on the surface of complex AlGaAs/InGaAs/GaAs and InGaAs/GaAs multilayer structures grown by molecular beam epitaxy and the results were compared with that obtained for bulk GaAs layers grown by the same technique. The oval defect density was correlated with the gallium

Electrical properties of indium doped Ga

Electrical properties of indium doped GaAs layers grown by MBE

✍ M. Missous; K.E. Singer; D.J. Nicholas 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 387 KB

Electrical conduction properties of Si δ

Electrical conduction properties of Si δ-doped GaAs grown by MBE

✍ A. Yildiz; S.B. Lisesivdin; H. Altuntas; M. Kasap; S. Ozcelik 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 248 KB

Reduction of surface defects in GaAs lay

Reduction of surface defects in GaAs layers grown by MBE

✍ Kawada, H.; Shirayone, S.; Takahashi, K. 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 403 KB

Growth Model of Oval Defect Structures i

Growth Model of Oval Defect Structures in MBE GaAs Layers

✍ N. J. Kadhim; D. Mukherjee 📂 Article 📅 1999 🏛 Springer 🌐 English ⚖ 99 KB