Growth limitations of strained multiple quantum wells
โ Scribed by D. Teng; P. Mandeville; L.F. Eastman
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 391 KB
- Volume
- 135
- Category
- Article
- ISSN
- 0022-0248
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๐ SIMILAR VOLUMES
We illustrate a procedure whereby the nonlinear optical response can be used to deternine the strain distribution in properly engineered InGaAs/GaAs multiple quantum well (MQW) structures with piezoelectric fields along the growth direction. We do this by fabricating two \(\mathrm{p}-\mathrm{i}(\mat
InGaAs/GaAs MOCVD-grown quantum wells have been investigated. Photoluminescence (PL) measurements have shown heavy-hole-related excitonic transitions within the temperature range from 10 to 100 K for all samples. In room-temperature photoreflectance (PR), sharp heavy-and lighthole excitonic transiti