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Growth Kinetic Processes of AlN Molecules on the Al-Polar Surface of AlN

✍ Scribed by Ma, Jun; Zhuang, Qinqin; Chen, Guran; Huang, Chengcheng; Li, Shuping; Wang, Huiqiong; Kang, Junyong

Book ID
120052156
Publisher
American Chemical Society
Year
2010
Tongue
English
Weight
457 KB
Volume
114
Category
Article
ISSN
1089-5639

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The gas-phase epitaxy of AlN on saphire substrates in the system Al-HCl-NH,-Ar was investigated. The uniformity and structural perfection of the layers were shown to be determined by gas dynamics in the growth zone. The growth rate of A1N-layer is proportional to AlCl concentration in the growth zon