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Comparison of the homoepitaxial growth of AlN crystals on Al and N surfaces

✍ Scribed by A. A. Wolfson; E. N. Mokhov

Book ID
111445090
Publisher
Springer
Year
2011
Tongue
English
Weight
494 KB
Volume
45
Category
Article
ISSN
1063-7826

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## Abstract A novel liquid phase epitaxy method was proposed for growing an AlN layer using Ga–Al binary flux under normal pressure. In this method, nitrogen gas was injected into the flux. Then a nitrided sapphire substrate was used as a template to achieve homoepitaxial growth. Advantages of usin