Homoepitaxial growth of AlN on nitrided sapphire by LPE method using Ga-Al binary solution
✍ Scribed by Adachi, Masayoshi ;Maeda, Kazuo ;Tanaka, Akikazu ;Kobatake, Hidekazu ;Fukuyama, Hiroyuki
- Book ID
- 105366053
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 407 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
A novel liquid phase epitaxy method was proposed for growing an AlN layer using Ga–Al binary flux under normal pressure. In this method, nitrogen gas was injected into the flux. Then a nitrided sapphire substrate was used as a template to achieve homoepitaxial growth. Advantages of using a nitrided sapphire substrate were demonstrated; the optimum flux composition was investigated. We grew 1‐µm‐thick c‐axis oriented AlN layer for 5 h at 1573 K. The full width at half maximum values of X‐ray rocking curves for AlN (0002) and (10−12) were, respectively, 50 and 590 arcsec. Moreover, the surface morphology and interfacial structure were observed using a scanning electron microscope, laser microscope, and high‐resolution transmission electron microscope.