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Growth conditions and characterization of InGaAs/GaAs strained layers superlattices

✍ Scribed by Quillec, M.; Goldstein, L.; Le Roux, G.; Burgeat, J.; Primot, J.


Book ID
118231166
Publisher
American Institute of Physics
Year
1984
Tongue
English
Weight
665 KB
Volume
55
Category
Article
ISSN
0021-8979

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Lasing and high intensity photoluminesce
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A pulsed nitrogen laser was used to excite iasing and photoluminescence (PL) in InGaAs-GaAs strained-layer superlattices (SLS). At moderate excitation intensities the PL spectrum consisted of a single narrow peak. But at higher intensities a second peak, up to 16 meV lower in energy, was also seen d