Lasing and high intensity photoluminescence in InGaAsGaAs strained layer superlattices

✍ Scribed by N.E.J. Hunt; P.E. Jessop

• Book ID: 103917727
• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 423 KB
• Volume: 4
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(88)90193-0

✦ Synopsis

A pulsed nitrogen laser was used to excite iasing and photoluminescence (PL) in InGaAs-GaAs strained-layer superlattices (SLS). At moderate excitation intensities the PL spectrum consisted of a single narrow peak. But at higher intensities a second peak, up to 16 meV lower in energy, was also seen due to optical gain induced in the waveguiding SLS structure. In a laser geometry gain could also be seen at an intermediate wavelength. about 4 meV below the spontaneous emission line center.