Growth and properties of the CuInS2 thin films produced by glancing angle deposition
โ Scribed by F. Chaffar Akkari; M. Kanzari; B. Rezig
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 906 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0928-4931
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Glancing angle deposition (GLAD) was used to sculpt chromium thin films sputter deposited by dc magnetron sputtering into the desired zigzag microstructure. The flux angle of incident species ฮฑ was systematically varied from 0 to 50 โข and periodically changed from ฮฑ to -ฮฑ. The total film thickness w
A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87