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Growth and p-type doping of GaN on c-plane sapphire by nitrogen plasma-assisted molecular beam epitaxy

✍ Scribed by Myung C. Yoo; M.Y. Park; S.K. Kang; H.D. Cho; J.W. Lee

Book ID: 108342461
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 530 KB
Volume: 175-176
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(96)01226-2

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