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Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

โœ Scribed by Han, J.; Baca, A. G.; Shul, R. J.; Willison, C. G.; Zhang, L.; Ren, F.; Zhang, A. P.; Dang, G. T.; Donovan, S. M.; Cao, X. A.; Cho, H.; Jung, K. B.; Abernathy, C. R.; Pearton, S. J.; Wilson, R. G.


Book ID
125425742
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
328 KB
Volume
74
Category
Article
ISSN
0003-6951

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## Abstract We demonstrate AlGaN/GaN heterojunction bipolar transistors (HBTs) by ammonia molecular beam epitaxy (NH~3~ MBE). The several benefits offered by NH~3~ MBE for the growth of GaN based vertical electronic devices are discussed. To obtain good ohmic contacts to the base layer, devices wer