๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

AlGaN/GaN heterojunction bipolar transistor

โœ Scribed by McCarthy, L.S.; Kozodoy, P.; Rodwell, M.J.W.; DenBaars, S.P.; Mishra, U.K.


Book ID
124099596
Publisher
IEEE
Year
1999
Tongue
English
Weight
165 KB
Volume
20
Category
Article
ISSN
0741-3106

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Graded-emitter AlGaN/GaN heterojunction
โœ Huang, J.J.; Hattendorf, M.; Feng, M.; Lambert, D.J.H.; Shelton, B.S.; Wong, M.M ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› The Institution of Electrical Engineers ๐ŸŒ English โš– 209 KB
AlGaN/GaN heterojunction bipolar transis
โœ Raman, Ajay ;Hurni, Christophe A. ;Speck, James S. ;Mishra, Umesh K. ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 495 KB

## Abstract We demonstrate AlGaN/GaN heterojunction bipolar transistors (HBTs) by ammonia molecular beam epitaxy (NH~3~ MBE). The several benefits offered by NH~3~ MBE for the growth of GaN based vertical electronic devices are discussed. To obtain good ohmic contacts to the base layer, devices wer