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Graded-emitter AlGaN/GaN heterojunction bipolar transistors

โœ Scribed by Huang, J.J.; Hattendorf, M.; Feng, M.; Lambert, D.J.H.; Shelton, B.S.; Wong, M.M.; Chowdhury, U.; Zhu, T.G.; Kwon, H.K.; Dupuis, R.D.


Book ID
121086008
Publisher
The Institution of Electrical Engineers
Year
2000
Tongue
English
Weight
209 KB
Volume
36
Category
Article
ISSN
0013-5194

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## Abstract We demonstrate AlGaN/GaN heterojunction bipolar transistors (HBTs) by ammonia molecular beam epitaxy (NH~3~ MBE). The several benefits offered by NH~3~ MBE for the growth of GaN based vertical electronic devices are discussed. To obtain good ohmic contacts to the base layer, devices wer