๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Growth and Evaporation of Crystals from the Vapour Phase

โœ Scribed by Kitchener, S. A.; Strickland-Constable, R. F.


Book ID
120144845
Publisher
The Royal Society
Year
1958
Tongue
English
Weight
868 KB
Volume
245
Category
Article
ISSN
0962-8444

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Study of the evaporation mechanism in si
โœ Dr. S. K. Lilov ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 252 KB ๐Ÿ‘ 2 views

Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place