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Interface kinetics of the growth and evaporation of ice single crystals from the vapour phase: II. Measurements in a pure water vapour environment

โœ Scribed by W. Beckmann; R. Lacmann


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
857 KB
Volume
58
Category
Article
ISSN
0022-0248

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Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place