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Growth and Electrical Characterization of 4H-SiC Epilayers

✍ Scribed by Kimoto, Tsunenobu; Danno, Katsunori; Hori, T.; Matsunami, Hiroyuki

Book ID
121263580
Publisher
Trans Tech Publications, Ltd.
Year
2007
Tongue
English
Weight
447 KB
Volume
556-557
Category
Article
ISSN
1662-9752

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## Abstract This work has been focused on characterization of thick 4H‐SiC layers produced by sublimation epitaxy. Nickel Schottky contacts have been fabricated in order to characterize the grown material and evaluate the interfacial layer between metal and semiconductor. The characterization study