Growth and characterizations of GaN on SiC substrates with buffer layers
β Scribed by Lin, C. F.; Cheng, H. C.; Chi, G. C.; Feng, M. S.; Guo, J. D.; Minghuang Hong, J.; Chen, C. Y.
- Book ID
- 125470616
- Publisher
- American Institute of Physics
- Year
- 1997
- Tongue
- English
- Weight
- 252 KB
- Volume
- 82
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.366048
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GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1Β± Β±x N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality
## Abstract We grew GaN films on atomicallyβflat LiNbO~3~ substrates incorporating low temperature AlN buffer layers by pulsed laser deposition (PLD) and investigated their structural properties. The fullβwidthβatβhalf maximum (FWHM) values of the XRD 11β24 rocking curves were reduced from 0.59Β° to