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Heteroepitaxial GaN films on silicon substrates with porous buffer layers

✍ Scribed by Yu. N. Buzynin; Yu. N. Drozdov; M. N. Drozdov; A. Yu. Luk’yanov; O. I. Khrykin; A. N. Buzynin; A. E. Luk’yanov; E. I. Rau; F. A. Luk’yanov

Book ID
111501157
Publisher
Allerton Press Inc
Year
2008
Tongue
English
Weight
307 KB
Volume
72
Category
Article
ISSN
1062-8738

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## Abstract We grew GaN films on atomically‐flat LiNbO~3~ substrates incorporating low temperature AlN buffer layers by pulsed laser deposition (PLD) and investigated their structural properties. The full‐width‐at‐half maximum (FWHM) values of the XRD 11–24 rocking curves were reduced from 0.59° to