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Heteroepitaxial III–V films on fianite substrates and buffer layers

✍ Scribed by Yu. N. Buzynin; M. N. Drozdov; A. N. Buzynin; V. V. Osiko; B. N. Zvonkov; Yu. N. Drozdov; A. E. Parafin; A. V. Murel; O. I. Khrykin; A. E. Luk’yanov; F. A. Luk’yanov; R. A. Sennov


Book ID
111501334
Publisher
Allerton Press Inc
Year
2009
Tongue
English
Weight
261 KB
Volume
73
Category
Article
ISSN
1062-8738

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GaN heteroepitaxial growth on LiNbO3(000
✍ Tsuchiya, Yousuke ;Kobayashi, Atsushi ;Ohta, Jitsuo ;Fujioka, Hiroshi ;Oshima, M 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 673 KB

## Abstract We grew GaN films on atomically‐flat LiNbO~3~ substrates incorporating low temperature AlN buffer layers by pulsed laser deposition (PLD) and investigated their structural properties. The full‐width‐at‐half maximum (FWHM) values of the XRD 11–24 rocking curves were reduced from 0.59° to