𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth and characterization of UTC photo-diodes containing GaAs1−xBix absorber layer

✍ Scribed by Geižutis, Andrejus; Pačebutas, Vaidas; Butkutė, Renata; Svidovsky, Polina; Strazdienė, Viktorija; Krotkus, Arūnas

Book ID
122091224
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
764 KB
Volume
99
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

MBE growth and characterization of GaAs1
MBE growth and characterization of GaAs1−xSbx epitaxial layers on Si (0 0 1) substrates
✍ T. Toda; F. Nishino; A. Kato; T. Kambayashi; Y. Jinbo; N. Uchitomi 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 217 KB

We investigated the growth of GaAs 1Àx Sb x (x ¼ 1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM