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Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells

✍ Scribed by Yang, G. F.; Chen, P.; Yu, Z. G.; Liu, B.; Xie, Z. L.; Xiu, X. Q.; Wu, Z. L.; Xu, F.; Xu, Z.; Hua, X. M.; Han, P.; Shi, Y.; Zhang, R.; Zheng, Y. D.

Book ID
118782214
Publisher
Springer
Year
2012
Tongue
English
Weight
562 KB
Volume
109
Category
Article
ISSN
1432-0630

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## Abstract This paper describes our recent progress on InN, In‐rich In~__x__~ Ga~1–__x__~ N, and InN/In~__x__~ Ga~1–__x__~ N quantum wells (QWs) grown by radio‐frequency plasma‐assisted molecular‐beam epitaxy. Among the essential growth sequences to obtain high‐quality InN, the nitridation process