Growth and characterization of InAs/GaAs monolayer structures
β Scribed by Takashi Fukui
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 496 KB
- Volume
- 93
- Category
- Article
- ISSN
- 0022-0248
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π SIMILAR VOLUMES
We have theoretically studied the electronic structure of a (311)-oriented InAs monolayer embedded in GaAs by using the semi-empirical sp 3 s \* tight-binding method; (InAs) 1 /(GaAs) n [311] superlattices with n = 10 βΌ 26 are used for the calculations. The (311)-InAs monolayer induces an electron l
## Abstract We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaA