Electronic structure of (311)-InAs monolayers embedded in GaAs

✍ Scribed by T. Saito

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 94 KB
• Volume: 23
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0218

✦ Synopsis

We have theoretically studied the electronic structure of a (311)-oriented InAs monolayer embedded in GaAs by using the semi-empirical sp 3 s * tight-binding method; (InAs) 1 /(GaAs) n [311] superlattices with n = 10 ∼ 26 are used for the calculations. The (311)-InAs monolayer induces an electron level (near the conduction-band edge) and a hole level (near the valence-band edge) in the GaAs band gap. The electron-hole energy separation is smaller than the GaAs band-gap energy by 0.06 eV (n = 10) and 0.03 eV (n = 26). The charge densities of the electron state and the hole state are weakly localized near the (311)-InAs monolayer.