CVD growth and characterization of singl
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S. Karmann; C. Haberstroh; F. Engelbrecht; W. Suttrop; A. SchΓΆner; M. Schadt; R.
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Article
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1993
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Elsevier Science
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English
β 352 KB
## Homoepitaxial growth of 6H-SiC layers is performed at 1600Β°C using propane and silane as source gases. The influence of the growth parameters, temperature and gas concentrations on the growth rate is discussed. The films are examined by structural, optical and electrical characterization techni