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Growth and characterization of bulk AlN substrates grown by PVT

✍ Scribed by Bickermann, M. ;Epelbaum, B. M. ;Kazan, M. ;Herro, Z. ;Masri, P. ;Winnacker, A.

Book ID
105363047
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
109 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We have grown bulk AlN boules by PVT at different growth temperatures. The grown material is single‐phase wurtzite AlN containing about 100 ppm wt of oxygen; transition metals are present only in the sub‐ppm range. Vibrational spectroscopy shows that structural quality of the single‐crystalline areas is high. In FT‐IR reflectivity, an additional maximum showing up in the 900–1000 cm^–1^ range is attributed to a probably distorted Al~2~O~3~ surface layer. In cathodoluminescence performed at 8 K, the samples show a broad luminescence band having its maximum varying between 3.45 eV and 3.85 eV as well as excitonic emission with transition energies of 6.03 eV, 5.93 eV and 5.82 eV. Remarkable variation in peak maximum and width of the broad band even within the same single‐crystalline area is probably caused by local inhomogeneities originating from fluctuations in impurity, e.g. oxygen, or defects concentration. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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