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Growth and characterization of 3C-SiC films on Si substrates by reactive magnetron sputtering; effects of CH4 partial pressure on the crystalline quality, structure and stoichiometry

โœ Scribed by Q. Wahab; L. Hultman; I.P. Ivanov; M. Willander; J.-E. Sundgren


Book ID
108388872
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
557 KB
Volume
261
Category
Article
ISSN
0040-6090

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