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Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering

โœ Scribed by Shoubin Xue; Xing Zhang; Ru Huang; Huizhao Zhuang


Publisher
Springer
Year
2008
Tongue
English
Weight
443 KB
Volume
94
Category
Article
ISSN
1432-0630

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MOCVD Growth and Characterization of GaN
โœ Zhang, X. ;Chua, S. J. ;Feng, Z. C. ;Chen, J. ;Lin, J. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 169 KB ๐Ÿ‘ 2 views

GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1ยฑ ยฑx N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality