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Growth and Characteristics of In-Doped GaN Thin Films

โœ Scribed by C.S. Kim; H.S. Yoon; R.J. Choi; H.K. Cho; D.S. Kang; C.-H. Hong; Y.B. Hahn; H.J. Lee


Book ID
104556419
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
83 KB
Volume
0
Category
Article
ISSN
1862-6351

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We investigated the role of hydrogen impurities in highly oriented In-doped ZnO (IZO:H) films. The conductivity of ZnO:H films exhibit small variation despite the increase of hydrogen ratio. The small variation of the carrier concentration in IZO:H films can be explained by the reduction of the oxyg